Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures
- Tomsk State University, Kuznetsov Siberian Physicotechnical Institute (Russian Federation), E-mail: gsn@phys.tsu.ru
On the basis of a self-consistent solution of the Schroedinger and Poisson equations, the features of the tunnel-current hysteresis in w-GaN/AlGaN(0001) double-barrier structures are investigated. It is shown that the hysteresis loop depends on the mutual orientation of external and internal fields in the well and is wider at the voltage polarity when these fields compensate each other. Within the framework of the single-resonance approximation, a tunnel-current model in the double-barrier structure is developed, and the relation between the hysteresis-loop parameters and resonant states is found. It is established that the hysteresis loop can be relatively wide ({approx}4 V) even in geometrically symmetric structures with the participation of two resonances. In asymmetrical structures, the change in the growth-surface type results in enhancement or suppression of the hysteresis loop depending on the alternation of nonequivalent barriers.
- OSTI ID:
- 21087870
- Journal Information:
- Semiconductors, Vol. 42, Issue 5; Other Information: DOI: 10.1134/S1063782608050163; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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