Tunneling in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN

Journal Article · Tue Apr 10 04:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2729888· OSTI ID:21055052

Golka, S; Pozzovivo, G; Schrenk, W; Strasser, G; Skierbiszewski, C; Siekacz, M; Grzegory, I; Porowski, S ^[1]

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1. Zentrum fuer Mikro- und Nanostrukturen, TU Wien, Floragasse 7, A-1040 Vienna (Austria)

We report on negative differential resistance of a AlGaN-GaN-AlGaN double barrier. Using inductively coupled plasma reactive ion etching, 6 {mu}m square mesas have been fabricated on 0001 GaN substrates derived from bulk GaN crystals grown at high pressure. Double barrier and n+ contact layers were grown Ga face using plasma assisted molecular-beam epitaxy. We obtain peak currents around 10 kA/cm2 and a peak-to-valley ratio of about 2 at room temperature, while no improvement was observed at cryogenic temperatures. The drop in current does not depend on specific conditions of measurement; however, it slowly decays after each measurement. Partial recovery by thermal treatment was possible.

• OSTI ID: 21055052
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 893; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
CRYSTAL GROWTH
CRYSTALS
DEPOSITION
DISLOCATIONS
ELECTRIC CURRENTS
ETCHING
GALLIUM NITRIDES
HEAT TREATMENTS
IONS
LAYERS
MOLECULAR BEAM EPITAXY
PRESSURE DEPENDENCE
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TUNNEL EFFECT