Nano structuring of GaAs(100) surface using low energy ion irradiation

Journal Article · Tue Jun 05 00:00:00 EDT 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4710197· OSTI ID:22004138

Kumar, Tanuj; Khan, S A; Verma, S; Kanjilal, D ^[1]

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1. Inter-university Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067 (India)

Nanostructuring of semi insulating GaAs (100) has been observed after irradiation of 50 keV Ar{sup +} ion beam in a wide angular range of 0 deg. to 60 deg. with respect to surface normal. Atomic Force Microscopy (AFM) analysis shows the formation of nano dots at smaller angle of irradiation. At higher angle of irradiation, self organized ripples were developed on the surface. The rms roughness estimated from the AFM analysis shows exponential growth with angle of irradiation. In the high frequency regime, PSD analysis suggests that surface morphology of the irradiated samples is governed by the surface diffusion and mass transport dominated processes.

• OSTI ID: 22004138
• Journal Information: AIP Conference Proceedings, Vol. 1447, Issue 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ARGON IONS
ATOMIC FORCE MICROSCOPY
DIFFUSION
GALLIUM ARSENIDES
ION BEAMS
IRRADIATION
MORPHOLOGY
NANOSTRUCTURES
RADIATION EFFECTS
ROUGHNESS
SEMICONDUCTOR MATERIALS
SURFACES