Nano Pattern on n-Si (100) Surface by Ion Irradiation

Journal Article · Fri Jul 15 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3606064· OSTI ID:21608188

Kumar, Tanuj; Khan, S A; Singh, U B; Verma, S; Kanjilal, D ^[1]

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1. Inter-university Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067 (India)

Nano structuring of silicon surface by low energy ion irradiation is reported. Semi insulating n-Si (100) has been irradiated by 50 keV Ar{sup +} ion beam at an angle of 50 deg. with respect to surface normal. The irradiated sample's surfaces were analyzed by Atomic Force Microscopy. Irradiation caused formation of nano-sized elliptical dots aligned in rows perpendicular to ion beam direction at fluence of 1x10{sup 17} ions/cm{sup 2}. At higher fluences of 3x10{sup 17} ions/cm{sup 2} and 7x10{sup 17} ions/cm{sup 2} self organized ripples were developed on the surface.

• OSTI ID: 21608188
• Journal Information: AIP Conference Proceedings, Vol. 1349, Issue 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606064; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ARGON IONS
ATOMIC FORCE MICROSCOPY
ION BEAMS
IRRADIATION
KEV RANGE
NANOSTRUCTURES
N-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
SILICON
SURFACES
BEAMS
CHARGED PARTICLES
ELEMENTS
ENERGY RANGE
IONS
MATERIALS
MICROSCOPY
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS