Formation of NiSi{sub 2} nanoclusters by Ni ion implantation into Si(100) and the effect of preinjection of Si{sub 2}{sup +} ions

Journal Article · Tue Jun 05 04:00:00 EDT 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4709991· OSTI ID:22004088

Sundaravel, B; Kalavathi, S; SanthanaRaman, P; Satyam, P V; Nair, K G.M. ^[1]

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1. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

Cluster ions can produce surface craters and amorphous ion tracks in semiconductors. This process in combination with defect mediated diffusion can be applied to fabricate buried nanowires. 1.4 MeV Si{sub 2}{sup +} ions at low fluences and 400 keV Ni{sup +} ions at high fluence are implanted into Si(100) and annealed at 600 deg. C. NiSi{sub 2} nanoclusters are formed and TEM measurements show surface craters of around 30 nm diameter which are followed by amorphous tracks of diameter 15 nm caused by the Si{sub 2}{sup +} ions in Si substrate. 50 nm long finger like buried vertical nanowires from the silicide clusters are formed along the amorphous track which is due to diffusion of Nickel atoms towards the surface mediated by the defects in the track. It is a step closer to the fabrication of buried nanowires.

• OSTI ID: 22004088
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1447; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CRYSTAL STRUCTURE
DIFFUSION
ION BEAMS
ION IMPLANTATION
ION PAIRS
IRRADIATION
NICKEL
NICKEL IONS
NICKEL SILICIDES
PARTICLE TRACKS
PHYSICAL RADIATION EFFECTS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SILICON
SILICON IONS
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY