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U.S. Department of Energy
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Combining the Best of Bulk and Surface Micromaching Using Si(111) Substrates

Conference ·
OSTI ID:2190
 [1]
  1. Sandia National Laboratories

This process combines the best features of bulk ad surface micromachining. It enables the production of stress free, thick, virtually arbitrarily shaped structures with well defiti thick or thin sacrificial layers, high sacrificial layer selectivity and large undercuts using IC compatible, processes. The basis of this approach is the use of dy available {111} oriented substrates. anisotropic Si trench etching, S iN masking and KOH etching.

Research Organization:
Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
2190
Report Number(s):
SAND98-2739C; ON: DE00002190
Country of Publication:
United States
Language:
English

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