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Title: Fabrication and Characteristics of Pentacene/Vanadium Pentoxide Field-Effect Transistors

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3666646· OSTI ID:21612443
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  1. Department of Electronic Control Engineering, Nagaoka National College of Technology (Japan)
  2. Graduate School of Science and Technology, Niigata University (Japan)
  3. Center for Transdisciplinary Research, Niigata University (Japan)
  4. School of Electrical and Computer Engineering, Inha University (Korea, Republic of)

Organic field-effect transistors (OFETs) were fabricated using pentacene thin layer, and the effects of inserted Lewis-acid thin layers on electrical properties were investigated. The OFETs have active layers of pentacene and vanadium pentoxide (V{sub 2}O{sub 5}) as a Lewis-acid layer. Typical source-drain current (I{sub DS}) vs. source-drain voltage (V{sub DS}) curves were observed under negative gate voltages (V{sub G}S) application, and the shift of the threshold voltage for FET driving (V{sub t}) to positive side was also observed by V{sub 2}O{sub 5} layer insertion, that is, -2.5 V for device with V{sub 2}O{sub 5} layer and -5.7 V for device without V{sub 2}O{sub 5} layer. It was thought that charge transfer (CT) complexes which were formed at the interface between pentacene and V{sub 2}O{sub 5} layer were dissociated by the applied gate voltage, and the generated holes seem to contribute to drain current and the apparent V{sub t} improvement.

OSTI ID:
21612443
Journal Information:
AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666646; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English