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Title: Electron and Hole Spin Relaxation in InAs Quantum Dots and Quasi-2D Structure

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3666577· OSTI ID:21612435
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  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijng 100083 (China)

Temperature dependence of hole and electron spin relaxation times in both InAs quantum dots (QDs) and quasi-two-dimensional (2D) monolayers has been investigated experimentally using time-resolved photoluminescence (TRPL). The results show that hole spin relaxation time is long enough to be comparable with that of electrons in the quasi-2D InAs structure, but is one order of magnitude smaller than the electron spin relaxation time in QDs structure. It is shown that both hole and electron spin relaxation times decrease monotonically with increasing temperature for InAs QDs, but show non-monotonic temperature-dependent behavior for the quasi-2D structure. Different spin relaxation mechanisms responsible for spin relaxation in the two structures have been discussed.

OSTI ID:
21612435
Journal Information:
AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666577; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English