Examination Of Si-Ge Heterostructure Nanowire Growth Using Monte Carlo Simulation

Journal Article · Fri Dec 23 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666335· OSTI ID:21612385

Nastovjak, A G; Neizvestny, I G; Shwartz, N L ^[1]

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1. Institute of Semiconductor Physics SB RAS, Lavrenteva, 13, Novosibirsk, 630090 (Russian Federation)

The process of Si-Ge heterostructures formation in nanowires (NWs) grown by vapor-liquid-solid mechanism was investigated using Monte Carlo simulation. Dependences of catalyst drop composition on temperature, flux intensity and nanowire diameter were obtained. Periodical oscillations of drop composition near mean value were observed. Oscillation results from layer-by-layer growth at the drop-whisker interface and necessity of supersaturation onset to start new layer formation. It was demonstrated that it is impossible to grow atomically abrupt axial heterojunctions via classical vapor-liquid-solid mechanism due to gradual change of catalyst drop composition when switching the fluxes. This phenomenon is the main reason of heterojunction blurriness. Junction abruptness was found to be dependent on nanowhisker diameter: in adsorption-induced growth mode abruptness of heterojunction decreases with diameter and in diffusion-induced mode it increases.

• OSTI ID: 21612385
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ADSORPTION
CALCULATION METHODS
CATALYSTS
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALLIZATION
DIFFUSION
ELEMENTS
EPITAXY
GERMANIUM
HETEROJUNCTIONS
INTERFACES
LAYERS
METALS
MOLECULAR BEAM EPITAXY
MONTE CARLO METHOD
NANOSTRUCTURES
OSCILLATIONS
PERIODICITY
PHASE TRANSFORMATIONS
QUANTUM WIRES
SATURATION
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SIMULATION
SOLIDS
SORPTION
SUPERSATURATION
VARIATIONS