Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates

Journal Article · Thu Dec 22 23:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666334· OSTI ID:21612384

Novikov, P L; Smagina, J V; Vlasov, D Yu; Deryabin, A S; Kozhukhov, A S; Dvurechenskii, A V ^[1]

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1. Institute of Semiconductor Physics SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk (Russian Federation)

Joint experimental and theoretical study of Ge nanoislands growth on pit-patterned Si substrate is carried out. Si substrates that have been templated by means of electron beam lithography and reactive ion etching have been used to grow Ge by molecular-beam epitaxy. Atomic-force-microscopy studies show that at Si(100) substrate temperature 550 deg. C, Ge nanoislands are formed at the pits' edges, rather than between the pits. The effect is interpreted in terms of energy barrier, that is formed near the edge of a pit and prevents Ge transport inside the pit. By molecular dynamics calculations the value of the energy barrier 0.9 eV was obtained.

• OSTI ID: 21612384
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
BEAMS
CALCULATION METHODS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELECTRON BEAMS
ELEMENTS
ENERGY RANGE
EPITAXY
ETCHING
EV RANGE
GERMANIUM
LEPTON BEAMS
METALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
MOLECULAR DYNAMICS METHOD
NANOSTRUCTURES
NUCLEATION
PARTICLE BEAMS
SEMIMETALS
SILICON
SUBSTRATES
SURFACE FINISHING