Growth of Cu{sub 2}ZnSnS{sub 4} Films by Sputtering with Post-Sulfurization

Journal Article · Fri Dec 23 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666304· OSTI ID:21612377

Yoo, Hyesun; Kim, JunHo ^[1]

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1. Department of Physics, University of Incheon, 12-1 Songdo-dong, Yeonsu-gu, Incheon 406-772 (Korea, Republic of)

We have fabricated Cu{sub 2}ZnSnS{sub 4} films by sputtering of stacked Cu/Sn/Cu/Zn films and subsequent sulfurizations. The sulfurizations were carried out at different temperatures, i.e., 520 deg. C(CZTS lowbar L film) and 570 deg. C(CZTS lowbar H film). The CZTS lowbar L film showed impurity phase, SnS{sub 2}, in X-ray diffraction (XRD) result and a lower optical band gap, {approx}1.3 eV. Further, in CZTS lowbar L film localized highly Zn-rich and Zn-rich phases were observed. For the CZTS lowbar H film, no segregated impurity phase was observed in XRD result, but Sn-poor phases were observed all over the film surface. The optical band gap of CZTS lowbar H film was observed to be {approx}1.4 eV.

• OSTI ID: 21612377
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BAND THEORY
CHALCOGENIDES
COHERENT SCATTERING
COPPER
COPPER COMPOUNDS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIFFRACTION
ELEMENTS
ENERGY GAP
ENERGY RANGE
EV RANGE
FILMS
IMPURITIES
INTERFACES
METALS
SCATTERING
SPUTTERING
SULFIDES
SULFUR COMPOUNDS
SURFACES
TEMPERATURE DEPENDENCE
TIN
TIN COMPOUNDS
TIN SULFIDES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
X-RAY DIFFRACTION
ZINC
ZINC COMPOUNDS