Detection of THz radiation with devices made from wafers with HgTe and InSb quantum wells

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666725· OSTI ID:21612369

Gouider, F; Nachtwei, G ^[1]; Vasilyev, Yu B; Koenemann, J ^[2]; Buckle, P D ^[3]; Bruene, C; Buhmann, H ^[4]

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1. Institut fuer Angewandte Physik, Technische Universitaet Braunschweig, D-38106 Braunschweig (Germany)
2. A. F. Ioffe Physical Technical Institute, RU-194021 St. Petersburg (Russian Federation)
3. QinetiQ Ltd, Malvern WR14 3PS (United Kingdom)
4. Julius-Maximilians-University Wuerzburg, D-97074 (Germany)

In this study we present measurements of the Terahertz (THz) photoconductivity of 2D electron system realized at HgTe/HgCdTe and AlInSb/InSb/AlInSb quantum wells (QWs) in Corbino geometry (inner and outer radius: 500 {mu}m and 1500 {mu}m) with different mobilities and electron densities. To characterize the devices, the Shubnikov-de Haas (SdH) effect up to magnetic fields B of 7T and current-voltage (I-V) characteristics at various magnetic fields were measured. The THz radiation is provided by a p-Ge laser which operates with a magnetic field and a high voltage for the electrical pumping. The stimulated emission is caused by transitions between Landau levels of light holes [1]. The laser is tunable in the range between 1.7 to 2.5 THz (corresponding to wavelengths between 120 to 180 {mu}m or energies of 7 to 12 meV). The laser is pulsed with a pulse rate of 1 Hz and pulse lengths of about 1 {mu}s with low switching times (about 20 ns). The monochromatic THz radiation is transferred to our samples via a 0.32m long brass waveguide immersed in liquid Helium. The detection of a change in the conductivity of the sample due to absorption of THz-radiation (photoresponse) requires a low-noise circuit. For the Corbino-shaped samples the photoresponse (PR) is measured via a resistor R{sub V} of 1 k{Omega}. The signal is transferred via in a high-frequency cable and detected with a digital oscilloscope.

• OSTI ID: 21612369
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666725; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CARRIER MOBILITY
DETECTION
ELECTRICAL PUMPING
ELECTRON DENSITY
ELECTRONS
HELIUM
HOLES
INDIUM ANTIMONIDES
INTERFACES
MAGNETIC FIELDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
MONOCHROMATIC RADIATION
PHOTOCONDUCTIVITY
PULSES
QUANTUM WELLS
RESISTORS
SEMICONDUCTOR MATERIALS
THZ RANGE
ANTIMONIDES
ANTIMONY COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
EPITAXY
EQUIPMENT
FERMIONS
FLUIDS
FREQUENCY RANGE
GASES
INDIUM COMPOUNDS
LEPTONS
MATERIALS
MERCURY COMPOUNDS
MOBILITY
NANOSTRUCTURES
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
PUMPING
RADIATIONS
RARE GASES
TELLURIDES
TELLURIUM COMPOUNDS