Characteristics of Various Photodiode Structures in CMOS Technology with Monolithic Signal Processing Electronics

Journal Article · Thu Oct 20 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3646839· OSTI ID:21612012

Mukhopadhyay, Sourav; Chandratre, V B; Sukhwani, Menka; Pithawa, C K ^[1]

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1. Centre for Microelectronics, Prabhadevi, Mumbai-400028 (India)

Monolithic optical sensor with readout electronics are needed in optical communication, medical imaging and scintillator based gamma spectroscopy system. This paper presents the design of three different CMOS photodiode test structures and two readout channels in a commercial CMOS technology catering to the need of nuclear instrumentation. The three photodiode structures each of 1 mm{sup 2} with readout electronics are fabricated in 0.35 um, 4 metal, double poly, N-well CMOS process. These photodiode structures are based on available P-N junction of standard CMOS process i.e. N-well/P-substrate, P+/N-well/P-substrate and inter-digitized P+/N-well/P-substrate. The comparisons of typical characteristics among three fabricated photo sensors are reported in terms of spectral sensitivity, dark current and junction capacitance. Among the three photodiode structures N-well/P-substrate photodiode shows higher spectral sensitivity compared to the other two photodiode structures. The inter-digitized P+/N-well/P-substrate structure has enhanced blue response compared to N-well/P-substrate and P+/N-well/P-substrate photodiode. Design and test results of monolithic readout electronics, for three different CMOS photodiode structures for application related to nuclear instrumentation, are also reported.

• OSTI ID: 21612012
• Journal Information: AIP Conference Proceedings, Vol. 1391, Issue 1; Conference: OPTICS 2011: International conference on light - Optics: phenomena, materials, devices, and characterization, Calicut, Kerala (India), 23-25 May 2011; Other Information: DOI: 10.1063/1.3646839; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
COMPARATIVE EVALUATIONS
DATA PROCESSING
DESIGN
METALS
N-TYPE CONDUCTORS
PHOTODIODES
P-N JUNCTIONS
P-TYPE CONDUCTORS
READOUT SYSTEMS
SENSITIVITY
SENSORS
SUBSTRATES
ELECTRICAL PROPERTIES
ELEMENTS
EVALUATION
MATERIALS
PHYSICAL PROPERTIES
PROCESSING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS