Quantum States Probed By Temperature Dependence Capacitance-Voltage Measurements For InP/GaAs Type-II Ultrathin Quantum Well

Journal Article · Fri Jul 15 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3606251· OSTI ID:21608127

Singh, S D; Dixit, V K; Khamari, Shailesh K; Ganguli, Tapas; Oak, S M

We report on the temperature dependent capacitance-voltage measurements on InP/GaAs ultrathin quantum well (QW). We observe a peak in apparent carrier distribution (ACD) profile at around the geometrical position of the QW. Peak value of the ACD profile increases, while it's width decreases with reducing temperature indicating that the peak in ACD is due to the accumulation of two dimensional electrons occupying the quantum states in ultrathin QW.

• OSTI ID: 21608127
• Journal Information: AIP Conference Proceedings, Vol. 1349, Issue 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606251; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
CAPACITANCE
CHARGE CARRIERS
ELECTRIC POTENTIAL
ELECTRONS
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
QUANTUM STATES
QUANTUM WELLS
TEMPERATURE DEPENDENCE
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM COMPOUNDS
LEPTONS
NANOSTRUCTURES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES