Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy

Journal Article · Fri Jul 15 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3606242· OSTI ID:21608125

Khamari, Shailesh K; Sinha, A K; Oak, S M ^[1]; Banik, S; Barman, S R ^[2]; Dixit, V K

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1. Raja Ramanna Centre for Advanced Technology, Indore-452013, M.P. (India)
2. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001, M.P. (India)

The analysis of core levels positions of Ga{sub 3}d, N{sub 1s} and P{sub 2}p at different etching depth from the plasma nitrided GaP (111) surface shows that the nitrogen ions interact with both Gallium and Phosphorous ions with nearly equal probability. The analysis of valence band spectra shows the type-II band alignment between GaPN{sub 0.22}/GaP and the valence band offset is {approx}2.2{+-}0.1 eV.

• OSTI ID: 21608125
• Journal Information: AIP Conference Proceedings, Vol. 1349, Issue 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606242; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BAND THEORY
CHARGE EXCHANGE
CRYSTAL STRUCTURE
ETCHING
EV RANGE
GALLIUM NITRIDES
GALLIUM PHOSPHIDES
INTERFACES
PROBABILITY
SEMICONDUCTOR MATERIALS
SURFACES
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY
ELECTRON SPECTROSCOPY
ENERGY RANGE
GALLIUM COMPOUNDS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
SPECTROSCOPY
SURFACE FINISHING