Injection photodiodes based on low-resistivity ZnS single crystals

Journal Article · Tue Dec 15 04:00:00 EST 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609130181· OSTI ID:21562378

Results of an experimental study of Ni-n-n{sup +}-In photodiode structures fabricated from a low-resistivity ZnS:Al crystal (n{sup +}-region) are reported. The high-resistivity compensated n-type layer is produced by thermal diffusion of silver. The photodiodes exhibit an injection amplification of the photocurrent under a forward bias of 1-10 V. The dependence of the currents through the diodes on the thickness of the n-type layer in the dark and under UV irradiation is determined. The photosensitivity is at a maximum in the fundamental absorption range in a narrow spectral band.

• OSTI ID: 21562378
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 13 Vol. 43; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
AMPLIFICATION
CHALCOGENIDES
CRYSTALS
DIFFUSION
DIMENSIONS
ELEMENTS
INJECTION
INORGANIC PHOSPHORS
INTAKE
IRRADIATION
LAYERS
METALS
MONOCRYSTALS
PHOSPHORS
PHOTODIODES
PHOTOSENSITIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SENSITIVITY
SILVER
SORPTION
SULFIDES
SULFUR COMPOUNDS
THERMAL DIFFUSION
THICKNESS
TRANSITION ELEMENTS
ZINC COMPOUNDS
ZINC SULFIDES