The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures

Journal Article · Mon Mar 15 04:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610030127· OSTI ID:21562332

Zhuravlev, K S ^[1]

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1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

The steady-state photoluminescence and kinetics of photoluminescence of the (100)-oriented and (311)Ga-oriented type II GaAs/AlAs superlattices are studied under the effect of the electric field of the surface acoustic wave. It is found that, in the (100)-oriented structures, the drop of intensity of steady-state photoluminescence and acceleration of photoluminescence kinetics are independent of the direction of the electric field of the surface acoustic wave with respect to crystallographic directions, while in the (311)Ga-oriented structures these effects are anisotropic. It is shown that all variations in the steady-state photoluminescence and in kinetics of photoluminescence of (100)-oriented and (311)Ga-oriented structures under the effect of the electric field of the acoustic wave are associated with transfer and capture by the nonradiative recombination centers of nonequilibrium charge carriers, which are initially localized in wide quantum wells formed by fluctuations of the thickness of the layers of the structures. From the obtained experimental data, the parameters of the profile of heterointerfaces of the (311)Ga GaAs/AlAs superlattices are determined. It is established that the lateral sizes of microgrooves in the [011] direction on the direct and inverse heterointerfaces of the (311)Ga superlattices exceed 3.2 nm, while the modulation of the thickness of the AlAs layers is from 0.8 to 1.2 nm.

• OSTI ID: 21562332
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACCELERATION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANISOTROPY
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CRYSTALLOGRAPHY
DATA
DIMENSIONS
ELECTRIC FIELDS
EMISSION
EXPERIMENTAL DATA
FLUCTUATIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
KINETICS
LAYERS
LUMINESCENCE
NANOSTRUCTURES
NUMERICAL DATA
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
QUANTUM WELLS
RECOMBINATION
SOUND WAVES
STEADY-STATE CONDITIONS
SUPERLATTICES
SURFACES
THICKNESS
VARIATIONS