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Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

Journal Article · · Semiconductors
 [1];  [2];  [3];  [4]
  1. Belarussian State University (Belarus)
  2. Transistor Plant Unitary Enterprise, Integral (Belarus)
  3. Scientific-Practical Materials Research Center of National Academy of Sciences of Belarus State Scientific and Production Association (Belarus)
  4. Ruhr-Universitaet Bochum (Germany)
Silicon diodes with a p{sup +}-n junction irradiated with 3.5-MeV electrons (the fluence ranged from 10{sup 15} to 4 x 10{sup 16} cm{sup -2}) have been studied. It is established that the dependence of the tangent of the angle of electrical losses tan{delta} on the frequency f of alternating current in the range f = 10{sup 2}-10{sup 6} Hz is a nonmonotonic function with two extrema: a minimum and a maximum. Transformation of the dependences tan{delta}(f) as the electron fluence and annealing temperature are increased is caused by a variation in the resistance of n-Si (the base region of the diodes) as a result of accumulation (as the fluence is increased) or disappearance and reconfiguration (in the course of annealing) of radiation defects. The role of time lag of the defect recharging in the formation of tan{delta}(f) is insignificant.
OSTI ID:
21562329
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 44; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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