GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 {mu}m

Journal Article · Mon Mar 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610030231· OSTI ID:21562326

Sadofyev, Yu G; Samal, N ^[1]; Gavrilenko, V I; Morozov, S V; Spivakov, A G; Yablonsky, A N ^[2]

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1. Trion Technology (United States)
2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

Optimum conditions for the growth of the GaAs{sub 1-x}Sb{sub x}/GaAs heterostructures by the method of molecular-bean epitaxy are determined; it is shown that effective long-wavelength photoluminescence at T = 300 K can be obtained at wavelengths as long as {lambda} = 1.3 {mu}m by increasing the antimony incorporation. As the excitation power is increased, the appearance of a short-wavelength line (in addition to a shift of a photoluminescence maximum to shorter wavelengths characteristic of the type II heterojunctions) related to direct optical transitions in the real space takes place; this relation is confirmed by the results of studying the photoluminescence spectra with subpicosecond and nanosecond time resolution in the case of pulsed excitation.

• OSTI ID: 21562326
• Journal Information: Semiconductors, Vol. 44, Issue 3; Other Information: DOI: 10.1134/S1063782610030231; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
AUGMENTATION
EPITAXY
EXCITATION
GALLIUM ARSENIDES
HETEROJUNCTIONS
LASERS
PHOTOLUMINESCENCE
QUANTUM WELLS
SPECTRA
TIME RESOLUTION
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
LUMINESCENCE
METALS
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES
RESOLUTION
SEMICONDUCTOR JUNCTIONS
TIMING PROPERTIES