Mechanism of the GaN LED efficiency falloff with increasing current
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- St. Petersburg State Polytechnic University (Russian Federation)
- St. Petersburg State University, Fock Institute of Physics (Russian Federation)
The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer. It is shown that the internal quantum efficiency falloff with increasing current density is due to the carrier leakage from the quantum well as a result of tunnel transitions from its band-tail states to local defect-related energy levels within the energy gaps of the barrier layers.
- OSTI ID:
- 21562274
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 44; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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