Dependence of photoluminescence spectra of epitaxial Pb{sub 1-x}Eu{sub x}Te (0 {<=} x {<=} 0.1) alloy layers on conditions of growth

Journal Article · Thu Jul 15 04:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610070055· OSTI ID:21562265

Selivanov, Yu G ^[1]; Felder, F ^[2]; Zasavitskiy, I I ^[1]

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1. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
2. Swiss Federal Institute of Technology, Thin Film Physics Group, Laboratory for Solid State Physics (Switzerland)

The photoluminescence spectra of the Pb{sub 1-x}Eu{sub x}Te (0 {<=} x {<=} 0.1) alloy are studied at low temperatures. Epitaxial layers were grown by molecular-beam epitaxy at different temperatures. Along with the basic line corresponding to interband radiative recombination, additional emission lines are observed in the low-energy region of the spectra. Some nonuniformities are observed at the sample surface (within an area smaller than 1% of the total surface area). The concentration and size (1-10 {mu}m) of the nonuniformities decrease with increasing temperature of growth. The additional emission lines are attributed to local nonuniformities in the layer. The dependence of the band gap of the Pb{sub 1-x}Eu{sub x}Te (0 {<=} x {<=} 0.1) alloy on the composition parameter x is determined at 77.4 K. The dependence is nonlinear and adequately described by the relation E{sub g} [eV] = 0.213 + 4.8x - 18.4x{sup 2}.

• OSTI ID: 21562265
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
AUGMENTATION
CRYSTAL GROWTH METHODS
EMISSION
EPITAXY
LAYERS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTON EMISSION
RECOMBINATION
SPECTRA
SURFACE AREA
SURFACE PROPERTIES
SURFACES
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K