Calculation of the charge-carrier mobility in diamond at low temperatures

Journal Article · Thu Jul 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610070067· OSTI ID:21562264

Baturin, A S; Gorelkin, V N; Soloviev, V R

The discrepancies between the quasi-elastic and inelastic approaches to the calculation of the electron and hole mobilities in diamond at low temperatures when the carrier scattering from acoustic phonons becomes significantly inelastic have been numerically estimated. The calculations showed that the mobility described by a close-to-equilibrium distribution function differs several times from that obtained within the quasi-elastic approach even at 20 K. The results obtained are important for interpreting the low-temperature electrical experiments on high-purity diamond single crystals.

• OSTI ID: 21562264
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 44; ISSN 1063-7826; ISSN SMICES
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
CHARGE CARRIERS
CRYSTALS
DIAMONDS
DISTRIBUTION FUNCTIONS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
FUNCTIONS
HOLE MOBILITY
IMPURITIES
LEPTONS
MINERALS
MOBILITY
MONOCRYSTALS
NONMETALS
PHONONS
QUASI PARTICLES
SCATTERING
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K