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The nature of edge luminescence of CdTe:Mg diffusion layers

Journal Article · · Semiconductors
The effect of the isovalent Mg impurity on the luminescence of CdTe is studied. Diffusion doping allows fabrication of CdTe:Mg layers that show efficient edge luminescence. The emission is attributed to interband electron-hole recombination and annihilation of excitons bound at the isovalent Mg impurity.
OSTI ID:
21562225
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 44; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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