Study of the layer-substrate interface in nc-Si-SiO{sub 2}-p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610090150· OSTI ID:21562222

Venger, E F; Kirillova, S I; Stara, T R; Khomenkova, L Yu; Sachenko, A V ^[1]; Goldstein, Y; Savir, E; Jedrzejewski, J ^[2]

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1. National Academy of Sciences, Lashkarev Institute of Semiconductor Physics (Ukraine)
2. Hebrew University, Racah Institute of Physics (Israel)

Layers grown by magnetron deposition of Si and SiO{sub 2} on a p-type silicon substrate and containing silicon nanocrystals in the oxide matrix have been studied by the method of temperature dependences of the capacitive photovoltage. The effect of the substrate orientation and natural oxidation preceding high-temperature annealing that results in the formation of Si nanocrystals in the SiO{sub 2} matrix on the layer-substrate interface characteristics is studied. The density of fast interface states trapping majority carriers was estimated. It is found that structural changes occur at the layer-substrate interface in the case of a (111) substrate and are caused by stresses appearing upon cooling. It was shown that natural oxidation of the deposited layer, preceding high-temperature annealing, causes an increase in the charge trapped in the oxide.

• OSTI ID: 21562222
• Journal Information: Semiconductors, Vol. 44, Issue 9; Other Information: DOI: 10.1134/S1063782610090150; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COOLING
DENSITY
DEPOSITION
INTERFACES
LAYERS
MAGNETRONS
ORIENTATION
OXIDATION
QUANTUM DOTS
SILICA
SILICON
SILICON OXIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TRAPPING
CHALCOGENIDES
CHEMICAL REACTIONS
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MINERALS
NANOSTRUCTURES
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON COMPOUNDS
TEMPERATURE RANGE