Effect of oxygen plasma on the properties of tantalum oxide films

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610090216· OSTI ID:21562216

Zarubin, A N; Novikov, V A; Petrova, Yu S; Skakunov, M S; Tolbanov, O P; Tyazhev, A V; Yaskevich, T M ^[1]

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1. Tomsk State University, Kuznetsov Siberian Physical Technical Institute (Russian Federation)

The effect of oxygen plasma on the leakage current, permittivity, and the dielectric loss tangent of Ta{sub 2}O{sub 5} thin layers (300-400 nm) is studied. It is suggested to treat tantalum oxide films in oxygen plasma to control their electrical and dielectric characteristics.

• OSTI ID: 21562216
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHALCOGENIDES
CONTROL
CURRENTS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
LEAKAGE CURRENT
MATERIALS
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PERMITTIVITY
PHYSICAL PROPERTIES
PLASMA
REFRACTORY METAL COMPOUNDS
TANTALUM COMPOUNDS
TANTALUM OXIDES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS