The effect of substrate temperature on the physical properties of tantalum oxide thin films grown by reactive radio-frequency sputtering
Thin films of TaO{sub x} were deposited on Si(1 0 0) by radio-frequency magnetron sputtering at substrate temperatures of 25, 100, 200, 300, 400, and 500 deg. C. The properties of TaO{sub x} thin films deposited with different oxygen-to-argon gas ratios and substrate temperatures were evaluated. The results show that the films with lowest leakage current density were obtained at ambient temperature with an oxygen mixture ratio (OMR) of 60% and the oxygen-to-tantalum ratio has a minimum with increasing deposition substrate temperature. From the current-voltage (I-V) characteristics of the TaO{sub x} thin films as a function of deposition substrate temperature, we found that the leakage current density in the TaO{sub x} thin films increases with increasing deposition substrate temperature. The higher leakage current density in the TaO{sub x} films is correlated to the oxygen deficiency in TaO{sub x} films and crystallization at higher deposition temperature.
- OSTI ID:
- 20884621
- Journal Information:
- Materials Research Bulletin, Vol. 38, Issue 14; Other Information: DOI: 10.1016/j.materresbull.2003.08.003; PII: S0025540803002150; Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films
Substrate biasing effect on the electrical properties of magnetron-sputtered high-k titanium silicate thin films