The cyclotron resonance of holes in InGaAs/GaAs heterostructures with quantum wells in quantizing magnetic fields

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610110229· OSTI ID:21562174

Ikonnikov, A V; Gavrilenko, V I; Kozlov, D V ^[1]; Drachenko, O; Schneider, H; Helm, M ^[2]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Forschungszentrum Dresden-Rossendorf, Dresden High Magnetic Field Laboratory and Institute of Ion-Beam Physics and Materials Research (Germany)

The spectra of the cyclotron resonance of holes in the InGaAs/GaAs selectively doped heterostructures with quantum wells are studied in pulsed magnetic fields as high as 50 T at 4.2 K. The previously observed effect of the inverted (compared with the results of the single-particle calculation of the Landau levels) ratio of the spectral weight of two split components of the line of the cyclotron resonance, which is attributed to the effects of the exchange interaction of holes, is confirmed. It is found that the ratios of intensities of the components of the line of the cyclotron resonance profoundly differ on the ascending and descending branches of the magnetic field pulse, which may be associated with a long time of the spin relaxation of holes between the two lowest Landau levels, which constitute tens of milliseconds.

• OSTI ID: 21562174
• Journal Information: Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110229; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CYCLOTRON RESONANCE
DOPED MATERIALS
EXCHANGE INTERACTIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
MAGNETIC FIELDS
PARTICLES
PULSES
QUANTUM WELLS
RELAXATION
SPECTRA
SPIN
ANGULAR MOMENTUM
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INTERACTIONS
MATERIALS
NANOSTRUCTURES
PARTICLE PROPERTIES
PNICTIDES
RESONANCE