Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands

Journal Article · Mon Nov 15 04:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610110254· OSTI ID:21562171

Mashin, A I; Nezhdanov, A V ^[1]; Isakov, M A; Shengurov, V G; Chalkov, V Yu; Denisov, S A ^[2]

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1. Lobachevsky State University (Russian Federation)
2. Lobachevsky State University, Research Institute for Physics and Technology (Russian Federation)

The method of confocal Raman microscopy is used for the first time to study the spatial distribution of elemental composition and elastic strains in self-assembled GexSi{sub 1-x}/Si(001) islands grown by the method of sublimation molecular-beam epitaxy in the GeH{sub 4} ambient. The lines related to vibrational modes Si-Si, Ge-Ge, and Si-Ge are identified in the Raman spectra measured in the regions with dimensions <100 nm on the surface of the samples. The spatial distribution of the Ge atomic fraction x in the Ge{sub x}Si{sub 1-x} alloy and of the elastic strain {epsilon} (averaged in depth over the island layer) have been calculated from the maps of the Raman shifts of the corresponding lines over the sample surface. The dependences of x and {epsilon} on the islands' growth temperature and on the nominal thickness of the deposited Ge layer have been studied.

• OSTI ID: 21562171
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
CRYSTAL GROWTH METHODS
DIMENSIONS
DISTRIBUTION
EPITAXY
EVAPORATION
GERMANIUM COMPOUNDS
GERMANIUM HYDRIDES
GERMANIUM SILICIDES
HYDRIDES
HYDROGEN COMPOUNDS
LAYERS
MICROSCOPY
MOLECULAR BEAM EPITAXY
PHASE TRANSFORMATIONS
RAMAN SPECTRA
SILICIDES
SILICON COMPOUNDS
SPATIAL DISTRIBUTION
SPECTRA
STRAINS
SUBLIMATION
SURFACES
THICKNESS