Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610110254· OSTI ID:21562171

Mashin, A I; Nezhdanov, A V ^[1]; Isakov, M A; Shengurov, V G; Chalkov, V Yu; Denisov, S A ^[2]

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1. Lobachevsky State University (Russian Federation)
2. Lobachevsky State University, Research Institute for Physics and Technology (Russian Federation)

The method of confocal Raman microscopy is used for the first time to study the spatial distribution of elemental composition and elastic strains in self-assembled GexSi{sub 1-x}/Si(001) islands grown by the method of sublimation molecular-beam epitaxy in the GeH{sub 4} ambient. The lines related to vibrational modes Si-Si, Ge-Ge, and Si-Ge are identified in the Raman spectra measured in the regions with dimensions <100 nm on the surface of the samples. The spatial distribution of the Ge atomic fraction x in the Ge{sub x}Si{sub 1-x} alloy and of the elastic strain {epsilon} (averaged in depth over the island layer) have been calculated from the maps of the Raman shifts of the corresponding lines over the sample surface. The dependences of x and {epsilon} on the islands' growth temperature and on the nominal thickness of the deposited Ge layer have been studied.

• OSTI ID: 21562171
• Journal Information: Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110254; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
GERMANIUM HYDRIDES
GERMANIUM SILICIDES
LAYERS
MICROSCOPY
MOLECULAR BEAM EPITAXY
RAMAN SPECTRA
SPATIAL DISTRIBUTION
STRAINS
SUBLIMATION
SURFACES
THICKNESS
CRYSTAL GROWTH METHODS
DIMENSIONS
DISTRIBUTION
EPITAXY
EVAPORATION
GERMANIUM COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
PHASE TRANSFORMATIONS
SILICIDES
SILICON COMPOUNDS
SPECTRA