H{sub 2}/N{sub 2} plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics

Journal Article · Fri Apr 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3562161· OSTI ID:21560180

Yamamoto, Hiroshi; Takeda, Keigo ^[1]; Ishikawa, Kenji; Hori, Masaru ^[1]; Ito, Masafumi ^[2]; Sekine, Makoto ^[3]; Kaminatsui, Takeshi; Hayashi, Hisataka; Sakai, Itsuko; Ohiwa, Tokuhisa ^[4]

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1. Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603 (Japan)
2. Department of Electrical and Electronic Engineering, Meijo University 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502 (Japan)
3. Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603 (Japan)
4. Process and Manufacturing Engineering Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)

This study investigates the mechanism of H{sub 2}/N{sub 2} plasma ashing damage of porous SiOCH films. Porous SiOCH films were treated by a H{sub 2}/N{sub 2} plasma using a 100-MHz capacitively coupled plasma etcher. The impact of ions, radicals, and vacuum ultraviolet radiation on the porous SiOCH films was investigated using in situ bulk analysis techniques such as spectroscopic ellipsometry and Fourier-transform infrared spectroscopy and ex situ film characterization techniques such as dynamic secondary ion mass spectrometry and x-ray photoelectron spectroscopy. In addition, plasma analysis including vacuum ultraviolet absorption spectroscopy was performed. The film characterization and plasma analysis show that the extraction of methyl by H radicals was enhanced by light while N radicals were responsible for inhibit the extraction of Si-CH{sub 3} bonds by forming nitride layer. The H{sub 2}/N{sub 2} plasma damage mechanism is discussed based on characterization of the film and plasma diagnostics.

• OSTI ID: 21560180
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
CARBON COMPOUNDS
CHARGED PARTICLES
DAMAGE
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTS
ETCHING
FAR ULTRAVIOLET RADIATION
FILMS
FOURIER TRANSFORM SPECTROMETERS
HYDROGEN
HYDROGEN COMPOUNDS
INFRARED SPECTRA
IONS
MASS SPECTRA
MASS SPECTROSCOPY
MATERIALS
MEASURING INSTRUMENTS
MOLECULAR IONS
NITROGEN
NONMETALS
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PLASMA DIAGNOSTICS
POROUS MATERIALS
RADIATIONS
SILICON COMPOUNDS
SPECTRA
SPECTROMETERS
SPECTROSCOPY
SURFACE FINISHING
SURFACES
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY