Mechanism of plasma-induced damage to low-k SiOCH films during plasma ashing of organic resists
- Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
- Plasma Center for Industrial Application, Nagoya Industries Promotion Corporation, 2268-1 Anagahora, Shimo-shidami, Moriyama-ku, Nagoya 463-0003 (Japan)
- Department of Process Technology, Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014 (Japan)
Plasma-induced damage to porous SiOCH (p-SiOCH) films during organic resist film ashing using dual-frequency capacitively coupled O{sub 2} plasmas was investigated using the pallet for plasma evaluation method developed by our group. The damage was characterized by ellipsometry and Fourier-transform infrared spectroscopy. Individual and synergetic damage associated with vacuum ultraviolet (VUV) and UV radiation, radicals, and ions in the O{sub 2} plasma were clarified. It was found that the damage was caused not only by radicals but also by synergetic reactions of radicals with VUV and UV radiation emitted by the plasmas. It is noteworthy that the damage induced by plasma exposure without ion bombardment was larger than the damage with ion bombardment. These results differed from those obtained using an H{sub 2}/N{sub 2} plasma for resist ashing. Finally, the mechanism of damage to p-SiOCH caused by O{sub 2} and H{sub 2}/N{sub 2} plasma ashing of organic resist films is discussed. These results are very important in understanding the mechanism of plasma-induced damage to p-SiOCH films.
- OSTI ID:
- 21538075
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
H{sub 2}/N{sub 2} plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics
Damage by radicals and photons during plasma cleaning of porous low-k SiOCH. I. Ar/O{sub 2} and He/H{sub 2} plasmas
Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CARBON COMPOUNDS
CHARGED PARTICLES
DAMAGE
DIELECTRIC MATERIALS
ELECTROMAGNETIC RADIATION
ELLIPSOMETRY
EVALUATION
FAR ULTRAVIOLET RADIATION
FILMS
FOURIER TRANSFORM SPECTROMETERS
HYDROGEN COMPOUNDS
INFRARED SPECTRA
ION BEAMS
IONS
MATERIALS
MEASURING INSTRUMENTS
MEASURING METHODS
OPTIMIZATION
ORGANIC COMPOUNDS
OXYGEN COMPOUNDS
PLASMA
POROUS MATERIALS
RADIATIONS
SILICON COMPOUNDS
SPECTRA
SPECTROMETERS
THIN FILMS
ULTRAVIOLET RADIATION