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Title: Epitaxy, strain, and composition effects on metal-insulator transition characteristics of SmNiO{sub 3} thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3598055· OSTI ID:21538461
; ; ;  [1]
  1. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)

SmNiO{sub 3} (SNO) thin films were deposited on LaAlO{sub 3} (LAO), SrTiO{sub 3}, SrLaAlO{sub 4}, Si, and Al{sub 2}O{sub 3} (sapphire) substrates by RF magnetron sputtering and studies were conducted to understand how film structure and composition influence the insulator-metal transition properties. It is observed that the compressive strain induces the insulator to metal transition (MIT), while tensile strain suppresses it. In the case of non-epitaxial films, semiconducting behavior is obtained on sapphire over a broad temperature range, while on heavily-doped Si substrate; an MIT is seen in out-of-plane resistance measurement. In addition, thickness dependence on the resistance behavior and nickel oxidation state has been examined for epitaxial SNO films on LAO substrates. Fine control of the MIT by modifications to the mismatch strain and thickness provides insights to enhance the performance and the functionality of these films for emerging electron devices.

OSTI ID:
21538461
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 12; Other Information: DOI: 10.1063/1.3598055; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English