Substrate-dependent post-annealing effects on the strain state and electrical transport of epitaxial La{sub 5/8-y}Pr{sub y}Ca{sub 3/8}MnO{sub 3} films

Journal Article · Sun Jun 15 04:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4881881· OSTI ID:22300096

Hu, Sixia; Wang, Haibo; Dong, Yongqi; Hong, Bing; He, Hao; Bao, Jun ^[1]; Huang, Haoliang ^[2]; Yang, Yuanjun; Luo, Zhenlin; Yang, Mengmeng; Gao, Chen ^[1]

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1. National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026 (China)
2. CAS Key Laboratory of Materials for Energy Conversion and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026 (China)

Large scale electronic phase separation (EPS) between ferromagnetic metallic and charge-ordered insulating phases in La{sub 5/8-y}Pr{sub y}Ca{sub 3/8}MnO{sub 3} (y = 0.3) (LPCMO) is very sensitive to the structural changes. This work investigates the effects of post-annealing on the strain states and electrical transport properties of LPCMO films epitaxially grown on (001){sub pc} SrTiO{sub 3} (tensile strain), LaAlO{sub 3} (compressive strain) and NdGaO{sub 3} (near-zero strain) substrates. Before annealing, all the films are coherent-epitaxial and insulating through the measured temperature range. Obvious change of film lattice is observed during the post-annealing: the in-plane strain in LPCMO/LAO varies from −1.5% to −0.1% while that in LPCMO/STO changes from 1.6% to 1.3%, and the lattice of LPCMO/NGO keeps constant because of the good lattice-match between LPCMO and NGO. Consequently, the varied film strain leads to the emergence of metal-insulator transitions (MIT) and shift of the critical transition temperature in the electrical transport. These results demonstrate that lattice-mismatch combined with post-annealing is an effective approach to tune strain in epitaxial LPCMO films, and thus to control the EPS and MIT in the films.

• OSTI ID: 22300096
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 6 Vol. 4; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CONTROL
CRYSTAL DEFECTS
EPITAXY
FILMS
LANTHANUM OXIDES
STRAINS
STRONTIUM TITANATES
SUBSTRATES
TEMPERATURE RANGE
TRANSITION TEMPERATURE