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Rutherford backscattering oscillation in scanning helium-ion microscopy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3549016· OSTI ID:21538179
;  [1]
  1. Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544 (United States)
Scanning helium-ion microscopy (SHIM) yields high-resolution imaging and is capable of surface elemental analysis at the nanometer scale. Here we examine recently discovered SHIM backscattered intensity oscillations versus the target atomic number. These oscillations are contrary to the expected monotonic increase of the backscattered helium-ion (He{sup +}) rate with the atomic number of elemental samples. We explore the ion-sample interaction via numerical simulations for a variety of scattering geometries and confirm the presence of oscillations. The oscillations are attributed to the atomic rather than the nuclear structure of the target. To that end, we study the link (near anticorrelation) between backscatter rate and He{sup +} beam stopping power, both versus the target atomic number. This leads us to ascribe the origin of the backscatter oscillation to the ''Z{sub 2}-oscillations'' of the stopping power in ion-beam physics, with the latter being rooted in the valence electron configuration of elemental targets.
OSTI ID:
21538179
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English