Energy transition characterization of 1.18 and 1.3 {mu}m bands of bismuth fiber by spectroscopy of the transient oscillations
- Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)
- Kotel'nikov Institute of Radioengineering and Electronics, Russian Academy of Science, Mokhovaya 11, bld.7, 125009 Moscow (Russian Federation)
- Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-333101 Tampere (Finland)
The experimental evidence of laser transition type in bismuth-doped silica fibers operating at different spectral bands is presented. Spectrally resolved transient (relaxation) oscillations studied for a Bi-doped fiber laser at room and liquid-nitrogen temperatures allow to identify the three- and four-level energy bands. 1.18 {mu}m short-wavelength band is found to be a three-level system at room temperature with highly populated terminal energy level of laser transition. The depopulation of ground level by cooling the fiber down to liquid-nitrogen temperature changes the transition to four-level type. Four-level energy transition distinguished at 1.32 {mu}m exhibits the net gain at room temperature.
- OSTI ID:
- 21518425
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 19; Other Information: DOI: 10.1063/1.3590266; (c) 2011 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BISMUTH
BISMUTH ADDITIONS
COOLING
DOPED MATERIALS
ENERGY LEVELS
FIBERS
GAIN
GLASS
GROUND LEVEL
LASER RADIATION
OSCILLATIONS
RELAXATION
SILICA
SPECTROSCOPY
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TRANSIENTS
WAVELENGTHS
ALLOYS
AMPLIFICATION
BISMUTH ALLOYS
ELECTROMAGNETIC RADIATION
ELEMENTS
LEVELS
MATERIALS
METALS
MINERALS
OXIDE MINERALS
RADIATIONS
TEMPERATURE RANGE