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Title: Energy transition characterization of 1.18 and 1.3 {mu}m bands of bismuth fiber by spectroscopy of the transient oscillations

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3590266· OSTI ID:21518425
;  [1]; ;  [2]; ;  [3]
  1. Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)
  2. Kotel'nikov Institute of Radioengineering and Electronics, Russian Academy of Science, Mokhovaya 11, bld.7, 125009 Moscow (Russian Federation)
  3. Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-333101 Tampere (Finland)

The experimental evidence of laser transition type in bismuth-doped silica fibers operating at different spectral bands is presented. Spectrally resolved transient (relaxation) oscillations studied for a Bi-doped fiber laser at room and liquid-nitrogen temperatures allow to identify the three- and four-level energy bands. 1.18 {mu}m short-wavelength band is found to be a three-level system at room temperature with highly populated terminal energy level of laser transition. The depopulation of ground level by cooling the fiber down to liquid-nitrogen temperature changes the transition to four-level type. Four-level energy transition distinguished at 1.32 {mu}m exhibits the net gain at room temperature.

OSTI ID:
21518425
Journal Information:
Applied Physics Letters, Vol. 98, Issue 19; Other Information: DOI: 10.1063/1.3590266; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English