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Spectral gain hole-burning at 1. 53. mu. m in erbium-doped fiber amplifiers

Journal Article · · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)
DOI:https://doi.org/10.1109/68.53251· OSTI ID:6610918
;  [1];  [2]
  1. AT and T Bell Laboratories, Crawford Hill Lab., Holmdel, NJ (US)
  2. AT and T Bell Laboratories, Murray Hill, NJ (US)
Spectral gain hole-burning at {lambda}{sub 0} = 1.53 {mu}m was observed in an erbium-doped fiber amplifier at temperatures between 4.2 and 77 K. The hole width was found to broaden with temperature for {ital T} {<=} 20 K according to a {ital T}{sup 1.73} law. From the data, the room-temperature homogeneous linewidth, associated with the 1.531 {mu}m transition in the {sup 4}{ital I}{sub 13/2}--{sup 4}{ital I}{sub 15/2} laser system, is evaluated to be {Delta}{lambda}{sub {ital h}} = 11.5 nm for aluminosilicate fibers.
OSTI ID:
6610918
Journal Information:
IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:4; ISSN IPTLE; ISSN 1041-1135
Country of Publication:
United States
Language:
English