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Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO{sub 2} substrates

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3569146· OSTI ID:21518346
 [1]; ;  [2]; ; ;  [1];  [3]
  1. School of Physical Science, Dublin City University, Glasnevin, Dublin 9, Dublin (Ireland)
  2. Department of Materials, University of Oxford, Parks Road, OX13PH Oxford (United Kingdom)
  3. FEI Company, Hillsboro, Oregon 097124 (United States)
Mn/Cu heterostructures thermally evaporated onto SiO{sub 2} and, subsequently, annealed were investigated by transmission electron microscopy related techniques in order to study the diffusion interactions which lead to barrier layer formation. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy provide evidence for the interdiffusion between the Mn and Cu layers following a 450 deg. C anneal, where the Mn diffuses toward the surface of the structure, while Cu diffuses toward the Mn/SiO{sub 2} but does not propagate into the dielectric. The chemical composition of the 2-3 nm interfacial layer is primarily a mixture of +2 and +3 Mn valences, in good agreement with previously reported results.
OSTI ID:
21518346
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 98; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English