Investigation of the release of Si from SiO{sub 2} during the formation of manganese/ruthenium barrier layers

Journal Article · Mon May 20 04:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4807428· OSTI ID:22162941

McCoy, A. P.; Casey, P.; Bogan, J.; Byrne, C.; Hughes, G. ^[1]

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1. School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

The thermodynamic and structural stability of ruthenium-manganese diffusion barriers on SiO{sub 2} is assessed. A {approx}2 nm film composed of partially oxidized manganese (MnO{sub x} where x < 1) was deposited on a 3 nm thick Ru film and the Mn-MnO{sub x}/Ru/SiO{sub 2} structure was subsequently thermally annealed. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy studies suggest the release and upward diffusion of Si from the dielectric substrate as a result of manganese-silicate formation at the Ru/SiO{sub 2} interface. The migration of Si up through the Ru film results in further manganese-silicate formation upon its interaction with the Mn-MnO{sub x} deposited layer.

• OSTI ID: 22162941
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 102; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
DEPLETION LAYER
DIELECTRIC MATERIALS
DIFFUSION BARRIERS
INTERACTIONS
INTERFACES
ION MICROPROBE ANALYSIS
MANGANESE
MANGANESE OXIDES
MANGANESE SILICATES
MASS SPECTRA
MASS SPECTROSCOPY
MIGRATION
RUTHENIUM
SILICON OXIDES
STABILITY
SUBSTRATES
THERMODYNAMICS
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY