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Title: Multiple phosphorus chemical sites in heavily phosphorus-doped diamond

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3554699· OSTI ID:21518291
 [1];  [2]; ;  [3]; ; ;  [1];  [1]; ;  [4]; ;  [5];  [6]
  1. Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530 (Japan)
  2. The Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530 (Japan)
  3. Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, 1-1-1 Kouto, Sayo, Hyogo 679-5198 (Japan)
  4. Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Center 2, Tsukuba, Ibaraki 305-8568 (Japan)
  5. National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  6. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

We have performed high-resolution core level photoemission spectroscopy on a heavily phosphorus (P)-doped diamond film in order to elucidate the chemical sites of doped-phosphorus atoms in diamond. P 2p core level study shows two bulk components, providing spectroscopic evidence for multiple chemical sites of doped-phosphorus atoms. This indicates that only a part of doped-phosphorus atoms contribute to the formation of carriers. From a comparison with band calculations, possible origins for the chemical sites are discussed.

OSTI ID:
21518291
Journal Information:
Applied Physics Letters, Vol. 98, Issue 8; Other Information: DOI: 10.1063/1.3554699; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English