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Title: On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3525170· OSTI ID:21518234
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  1. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications (CRHEA), Centre National de la Recherche Scientifique (CNRS), Rue Bernard Gregory, F-06560 Valbonne (France)

The polarity of GaN micro- and nanowires grown epitaxially by metal organic vapor phase epitaxy on sapphire substrates and by molecular-beam epitaxy, using ammonia as a nitrogen source, on sapphire and silicon substrates has been investigated. On Al{sub 2}O{sub 3}(0001), whatever the growth technique employed, the GaN wires show a mixture of Ga and N polarities. On Si(111), the wires grown by ammonia-molecular beam epitaxy are almost entirely Ga-polar (around 90%) and do not show inversion domains. These results can be understood in terms of the growth conditions employed during the nucleation stage.

OSTI ID:
21518234
Journal Information:
Applied Physics Letters, Vol. 98, Issue 1; Other Information: DOI: 10.1063/1.3525170; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English