On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy
- Centre de Recherche sur l'Hetero-Epitaxie et ses Applications (CRHEA), Centre National de la Recherche Scientifique (CNRS), Rue Bernard Gregory, F-06560 Valbonne (France)
The polarity of GaN micro- and nanowires grown epitaxially by metal organic vapor phase epitaxy on sapphire substrates and by molecular-beam epitaxy, using ammonia as a nitrogen source, on sapphire and silicon substrates has been investigated. On Al{sub 2}O{sub 3}(0001), whatever the growth technique employed, the GaN wires show a mixture of Ga and N polarities. On Si(111), the wires grown by ammonia-molecular beam epitaxy are almost entirely Ga-polar (around 90%) and do not show inversion domains. These results can be understood in terms of the growth conditions employed during the nucleation stage.
- OSTI ID:
- 21518234
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 98; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
AMMONIA
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CORUNDUM
CRYSTAL GROWTH METHODS
DEPOSITION
DIELECTRIC MATERIALS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HYDRIDES
HYDROGEN COMPOUNDS
MATERIALS
MICROSTRUCTURE
MINERALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NONMETALS
NUCLEATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
POLARIZATION
QUANTUM WIRES
SAPPHIRE
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING
VAPOR PHASE EPITAXY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
AMMONIA
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CORUNDUM
CRYSTAL GROWTH METHODS
DEPOSITION
DIELECTRIC MATERIALS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HYDRIDES
HYDROGEN COMPOUNDS
MATERIALS
MICROSTRUCTURE
MINERALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NONMETALS
NUCLEATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
POLARIZATION
QUANTUM WIRES
SAPPHIRE
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING
VAPOR PHASE EPITAXY