On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy
- Centre de Recherche sur l'Hetero-Epitaxie et ses Applications (CRHEA), Centre National de la Recherche Scientifique (CNRS), Rue Bernard Gregory, F-06560 Valbonne (France)
The polarity of GaN micro- and nanowires grown epitaxially by metal organic vapor phase epitaxy on sapphire substrates and by molecular-beam epitaxy, using ammonia as a nitrogen source, on sapphire and silicon substrates has been investigated. On Al{sub 2}O{sub 3}(0001), whatever the growth technique employed, the GaN wires show a mixture of Ga and N polarities. On Si(111), the wires grown by ammonia-molecular beam epitaxy are almost entirely Ga-polar (around 90%) and do not show inversion domains. These results can be understood in terms of the growth conditions employed during the nucleation stage.
- OSTI ID:
- 21518234
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 1; Other Information: DOI: 10.1063/1.3525170; (c) 2011 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target
Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy
Features of molecular beam epitaxy of the GaN (0001) and GaN (0001-bar) layers with the use of different methods of activation of nitrogen
Journal Article
·
Sun Sep 15 00:00:00 EDT 2013
· AIP Advances
·
OSTI ID:21518234
+2 more
Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy
Journal Article
·
Mon Oct 23 00:00:00 EDT 2006
· Applied Physics Letters
·
OSTI ID:21518234
+1 more
Features of molecular beam epitaxy of the GaN (0001) and GaN (0001-bar) layers with the use of different methods of activation of nitrogen
Journal Article
·
Sat Aug 15 00:00:00 EDT 2009
· Semiconductors
·
OSTI ID:21518234
+2 more
Related Subjects
36 MATERIALS SCIENCE
ALUMINIUM OXIDES
AMMONIA
CHEMICAL VAPOR DEPOSITION
DIELECTRIC MATERIALS
GALLIUM NITRIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NITROGEN
NUCLEATION
ORGANOMETALLIC COMPOUNDS
POLARIZATION
QUANTUM WIRES
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
VAPOR PHASE EPITAXY
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
CORUNDUM
CRYSTAL GROWTH METHODS
DEPOSITION
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
MATERIALS
MINERALS
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NONMETALS
ORGANIC COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SURFACE COATING
ALUMINIUM OXIDES
AMMONIA
CHEMICAL VAPOR DEPOSITION
DIELECTRIC MATERIALS
GALLIUM NITRIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NITROGEN
NUCLEATION
ORGANOMETALLIC COMPOUNDS
POLARIZATION
QUANTUM WIRES
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
VAPOR PHASE EPITAXY
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
CORUNDUM
CRYSTAL GROWTH METHODS
DEPOSITION
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
MATERIALS
MINERALS
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NONMETALS
ORGANIC COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SURFACE COATING