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Origin of ferromagnetism in self-assembled Ga{sub 1-x}Mn{sub x}As quantum dots grown on Si

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3526378· OSTI ID:21518209
; ; ; ; ; ;  [1];  [2]
  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
  2. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China)

Self-assembled Ga{sub 1-x}Mn{sub x}As magnetic semiconductor quantum dots have been grown on Si (001) substrates using droplet epitaxy by molecular-beam epitaxy. Structural characterization reveals that these dots possess a zinc-blende lattice. The Ga{sub 1-x}Mn{sub x}As quantum dots with 8% Mn content are ferromagnetically soft and slightly anisotropic at low temperature, and show the superparamagnetic behavior with a blocking temperature of 20 K in the in-plane direction. Moreover, the results of x-ray absorption near edge structure provide direct evidences for the substitutional Mn{sup 2+} ion with a half-filled d{sup 5} configuration for the Ga site, suggesting the hole-mediated ferromagnetism in zero-dimensional Ga{sub 1-x}Mn{sub x}As quantum dots.

OSTI ID:
21518209
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 97; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English