Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level

Journal Article · Mon Nov 29 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3524211· OSTI ID:21518196

Radamson, H H; Kolahdouz, M; Shayestehaminzadeh, S; Farniya, A Afshar; Wissmar, S ^[1]

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1. School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100x100 {mu}m{sup 2} pixel sizes and low noise constant (K{sub 1/f}) value of 4.4x10{sup -15} is presented. The outstanding performance of the devices is due to Ni-silicide contacts, smooth interfaces, and high quality multiquantum wells containing high Ge content.

• OSTI ID: 21518196
• Journal Information: Applied Physics Letters, Vol. 97, Issue 22; Other Information: DOI: 10.1063/1.3524211; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BACKSCATTERING
BOLOMETERS
CARBON ADDITIONS
CHEMICAL ANALYSIS
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
EPITAXY
GERMANIUM ALLOYS
GERMANIUM SILICIDES
MASS SPECTRA
MONOCRYSTALS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
THERMISTORS
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION
X-RAY DIFFRACTION
ALLOYS
CHEMICAL COATING
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTALS
DEPOSITION
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
GERMANIUM COMPOUNDS
IONIZING RADIATIONS
MATERIALS
MEASURING INSTRUMENTS
MICROSCOPY
NANOSTRUCTURES
RADIATIONS
SCATTERING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SPECTRA
SURFACE COATING