Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition
- Denso Corporation, Aichi 470-0111 (Japan)
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565 (Japan)
- University of Tsukuba, Tsukuba 305-8571 (Japan)
We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO{sub 2}) films. We determined the TCR and thermal-hysteresis-width diagram of the V{sub 1−x−y}Cr{sub x}Nb{sub y}O{sub 2} films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V{sub 0.90}Cr{sub 0.06}Nb{sub 0.04}O{sub 2} film grown on a TiO{sub 2}-buffered SiO{sub 2}/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO{sub 2}-based uncooled bolometers.
- OSTI ID:
- 22611696
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 5 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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