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Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3522830· OSTI ID:21518190
; ;  [1]
  1. Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, 560 064 Bangalore (India)
High quality GaN is grown by plasma assisted molecular beam epitaxy on Ga induced superstructural phases of Si(111)7x7. Three stable surface phases induced by Ga adsorption, viz., (1x1), (6.3x6.3), and ({radical}3x{radical}3)R30 deg., are employed as templates to grow epitaxial (0001) GaN thin films. GaN grown on Si({radical}3x{radical}3)R30 deg. -Ga is found to be highly crystalline with intense (0002) x-ray diffraction and photoluminescence peaks with low full width at half maximum, low surface roughness, and stoichiometric surface composition. The high quality of these GaN films formed at a low temperature of 400 deg. C is explained by the integral (x2) lattice matching between the unit cell of GaN and the ({radical}3x{radical}3) phase. The experiments demonstrate a plausible approach of adsorbate induced surface modifications as templates for III-V hetroepitaxy on Si surfaces.
OSTI ID:
21518190
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 97; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English