Study of in-plane orientation of epitaxial AlN films grown on (111) SrTiO{sub 3}

Journal Article · Mon Jun 16 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2948854· OSTI ID:21120825

Yao, Z Q; Fan, X; He, B; Zhang, W J; Bello, I; Lee, S T ^[1]; Meng, X M ^[2]

---

1. Center of Super-Diamond and Advanced Films (COSDAF), and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region (China)
2. Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing (China)

Substrate temperature and chemical etching were demonstrated to be dominant factors in determining the in-plane orientation of AlN films grown epitaxially on SrTiO{sub 3} (STO) (111) substrates by magnetron sputtering. Single-domain epitaxial AlN films were grown at moderate temperatures of 270-370 deg. C with a sharp interface and orientation relationship of [2110]{sub AlN} parallel [011]{sub STO} and (0002){sub AlN} parallel (111){sub STO}. At temperature above 470 deg. C, an additional 30 deg. in-plane-rotated AlN domain appeared, and increased in percentage with increasing temperature. A model based on the reconstruction of STO (111) surfaces from (1x1) to ({radical}(3)x{radical}(3))R30 deg. was proposed to account for the formation of this new domain.

• OSTI ID: 21120825
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL GROWTH
DEPOSITION
EPITAXY
ETCHING
FILMS
LAYERS
MAGNETRONS
SEMICONDUCTOR MATERIALS
SPUTTERING
STRONTIUM TITANATES
SUBSTRATES