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Title: Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3573740· OSTI ID:21511542
; ; ;  [1]
  1. Centre for Advanced Devices and Systems (CADS), Faculty of Engineering, Multimedia University, Selangor Darul Ehsan (Malaysia)

Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

OSTI ID:
21511542
Journal Information:
AIP Conference Proceedings, Vol. 1328, Issue 1; Conference: PERFIK-2010: Malaysia annual physics conference 2010, Damai Laut (Malaysia), 27-30 Oct 2010; Other Information: DOI: 10.1063/1.3573740; (c) 2011 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English