Application Of Ti-Based Self-Formation Barrier Layers To Cu Dual-Damascene Interconnects

Journal Article · Wed Nov 24 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3527142· OSTI ID:21506811

Ito, Kazuhiro; Kohama, Kazuyuki ^[1]; Ohmori, Kazuyuki; Mori, Kenichi; Maekawa, Kazuyoshi; Asai, Koyu ^[2]; Murakami, Masanori ^[3]

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1. Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501 (Japan)
2. Process Technology Div., Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504 (Japan)
3. The Ritsumeikan Trust, Nakagyo-ku, Kyoto 604-8520 (Japan)

Cu interconnects have been used extensively in ULSI devices. However, large resistance-capacitance delay and poor device reliability have been critical issues as the device feature size has reduced to nanometer scale. In order to achieve low resistance and high reliability of Cu interconnects, we have applied a thin Ti-based self-formed barrier (SFB) using Cu(Ti) alloy seed to 45nm-node dual damascene interconnects and evaluated its performance. The line resistance and via resistance decreased significantly, compared with those of conventional Ta/TaN barriers. The stress migration performance was also drastically improved using the SFB process. A performance of time dependent dielectric breakdown revealed superior endurance. These results suggest that the Ti-based SFB process is one of the most promising candidates for advanced Cu interconnects. TEM and X-ray photoelectron spectroscopy observations for characterization of the Ti-based SFB structure were also performed. The Ti-based SFB consisted of mainly amorphous Ti oxides. Amorphous or crystalline Ti compounds such as TiC, TiN, and TiSi formed beneath Cu alloy films, and the formation varied with dielectric.

• OSTI ID: 21506811
• Journal Information: AIP Conference Proceedings, Vol. 1300, Issue 1; Conference: 11. international workshop on stress-induced phenomena in metallization, Bad Schandau (Germany), 12-14 Apr 2010; Other Information: DOI: 10.1063/1.3527142; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
BREAKDOWN
CAPACITANCE
COPPER ALLOYS
CRYSTALS
DIELECTRIC MATERIALS
FILMS
MIGRATION
OXIDES
RELIABILITY
STRESSES
TANTALUM NITRIDES
TIME DEPENDENCE
TIN
TITANIUM CARBIDES
TITANIUM NITRIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY
ALLOYS
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
MATERIALS
METALS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SPECTROSCOPY
TANTALUM COMPOUNDS
TITANIUM COMPOUNDS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENT COMPOUNDS