Light-induced point defect reactions of residual iron in crystalline silicon after aluminum gettering

Journal Article · Sun Aug 15 04:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3474658· OSTI ID:21476426

Abdelbarey, D; Kveder, V; Schroeter, W; Seibt, M ^[1]

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1. IV. Physikalisches Institut der Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, D-37077 Goettingen (Germany)

Deep level transient spectroscopy is used to study light-induced reactions of residual iron impurities after aluminum gettering (AlG) in crystalline silicon. White-light illumination at room temperature leads to the formation of a defect which is associated with a donor level at 0.33 eV above the valence band. This defect is stable up to about 175 deg. C where it dissociates reversibly in case of small iron concentrations and irreversibly for high iron concentrations. Since marker experiments using gold and platinum diffusion show a high vacancy concentration after AlG a tentative identification of the new defect as the metastable iron-vacancy pair is proposed.

• OSTI ID: 21476426
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIFFUSION
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
EV RANGE
GETTERING
GOLD
ILLUMINANCE
IRON
MATERIALS
METALS
PLATINUM
PLATINUM METALS
POINT DEFECTS
RADIATIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TRANSITION ELEMENTS
VACANCIES
VALENCE
VISIBLE RADIATION