Electron irradiation effects on electrical and optical properties of sol-gel prepared ZnO films

Journal Article · Sun Aug 15 04:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3452333· OSTI ID:21476424

Bhat, J S; Patil, A S; Swami, N; Mulimani, B G ^[1]; Gayathri, B R ^[1]; Deshpande, N G; Kim, G H; Seo, M S; Lee, Y P ^[2]

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1. Department of Physics, Karnatak University, Dharwad 580 003 (India)
2. Department of Physics and Quantum Photonic Science Research Centre, Hanyang University, Seoul 133-791 (Korea, Republic of)

The effects of electron beam irradiation on the electrical and the optical properties of zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films, prepared by the sol-gel technique, were investigated. The grain size, surface morphology, sheet resistance, optical constants, absorption edge, and direct and indirect optical band gaps of these films were analyzed before and after exposure to electron beam. The decrease in the structural homogeneity and the crystallinity of the films after exposure to electron irradiation is observed. The irradiation causes increase in the sheet resistance and blueshift in the absorption edge for both ZnO and ZnO:Al films. The change in carrier concentration due to doping as well as the exposure to electron beam are responsible for the modified electrical and optical properties.

• OSTI ID: 21476424
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
BEAMS
CARRIER DENSITY
CHALCOGENIDES
CHARGE CARRIERS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ELEMENTS
ENERGY GAP
FILMS
GRAIN SIZE
IRRADIATION
LEPTON BEAMS
MATERIALS
METALS
MICROSTRUCTURE
MORPHOLOGY
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SIZE
SOL-GEL PROCESS
SPECTRAL SHIFT
SURFACES
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES