Polarization Raman spectroscopy of GaN nanorod bundles

Journal Article · Sun Aug 15 04:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3460811· OSTI ID:21476397

Tite, T; Lee, C J; Chang, Y -M ^[1]

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1. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Raman selection rules in these GaN nanorod bundles. The deviation of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules is attributed to both the orientation of the crystal axis with respect to the polarization vectors of incident and scattered light and the structural defects in the merging boundary of GaN nanorods. The presence of high defect density induced by local strain at the merging boundary was further confirmed by transmission electron microscopy. The averaged defect interspacing was estimated to be around 3 nm based on the spatial correlation model.

• OSTI ID: 21476397
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CORRELATIONS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
LASER SPECTROSCOPY
MATERIALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
ORIENTATION
PLASMA
PNICTIDES
POLARIZATION
PROCESSING
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RELAXATION
SELECTION RULES
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
STRAINS
TRANSMISSION ELECTRON MICROSCOPY