Thickness evaluation of InGaAs/InAlAs quantum wells
- Kyushu Institute of Technology, Fukuoka 820-8502 (Japan)
- Central Research Laboratory, Hitachi Ltd., Tokyo 185-8601 (Japan)
- Research and Development Laboratory, Hitachi Cable Ltd., Ibaragi 300-0026 (Japan)
This work proposes a new optoelectronic measurement of quantum well (QW) thickness and applies it to doped and undoped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As multiple-QW structures. Near-infrared spectroscopic identification of the interband optical transition at 100-300 K gave the eigenenergies of the conduction band in the QW. Evaluation of the QW thickness involved analysis of the effective mass at the corresponding eigenenergy. QW thicknesses in the range of 5.45-20.8 nm were determined in six different wafers. These thicknesses agreed well with the QW thicknesses estimated by double-crystal x-ray diffraction within almost two monolayers. This measurement was used to determine the distance of potential boundaries confining the electron wave functions.
- OSTI ID:
- 21476366
- Journal Information:
- Journal of Applied Physics, Vol. 108, Issue 3; Other Information: DOI: 10.1063/1.3457787; (c) 2010 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
CRYSTALS
DOPED MATERIALS
EFFECTIVE MASS
ELECTRONS
EVALUATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
INFRARED SPECTRA
POTENTIALS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
THICKNESS
WAVE FUNCTIONS
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
DIMENSIONS
ELEMENTARY PARTICLES
FERMIONS
FUNCTIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LEPTONS
MASS
MATERIALS
NANOSTRUCTURES
PNICTIDES
SCATTERING
SPECTRA