skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thickness evaluation of InGaAs/InAlAs quantum wells

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3457787· OSTI ID:21476366
;  [1];  [2];  [3]
  1. Kyushu Institute of Technology, Fukuoka 820-8502 (Japan)
  2. Central Research Laboratory, Hitachi Ltd., Tokyo 185-8601 (Japan)
  3. Research and Development Laboratory, Hitachi Cable Ltd., Ibaragi 300-0026 (Japan)

This work proposes a new optoelectronic measurement of quantum well (QW) thickness and applies it to doped and undoped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As multiple-QW structures. Near-infrared spectroscopic identification of the interband optical transition at 100-300 K gave the eigenenergies of the conduction band in the QW. Evaluation of the QW thickness involved analysis of the effective mass at the corresponding eigenenergy. QW thicknesses in the range of 5.45-20.8 nm were determined in six different wafers. These thicknesses agreed well with the QW thicknesses estimated by double-crystal x-ray diffraction within almost two monolayers. This measurement was used to determine the distance of potential boundaries confining the electron wave functions.

OSTI ID:
21476366
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 3; Other Information: DOI: 10.1063/1.3457787; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English